查看“︁華特·蕭特基”︁的源代码

-{H|zh-hans:肖特基; zh-hant:蕭特基}-
{{Infobox Scientist
|name              = 華特·蕭特基<br />Walter Schottky
<!-- |image             = :en:Walter_Hermann_Schottky_(1886-1976).jpg -->
|image_size        = 120px
|caption           = Walter Hermann Schottky (1886-1976) 
| birth_date = 	 1886年7月23日
|birth_place       = {{SWI}}[[日內瓦]]
| death_date =  {{death_date_and_age|1976|3|4|1886|7|23|mf=y}}
|death_place       = {{GER}}[[普雷茨费尔德]]
|residence         = {{GER}}
|citizenship       = 
|nationality       = {{GER}}
|ethnicity         = 
|fields            = [[物理學家]]
|workplaces        = [[耶拿大學]]<br />[[維爾茨堡大學]]<br />[[羅斯托克大學]]<br />[[西門子公司|西門子研究實驗室]]
|alma_mater        = [[柏林洪堡大學|柏林大學]]
|doctoral_advisor  = [[普朗克]][[File:Nobel_prize_medal.svg|20px]]<br />[[海因里希·鲁本斯]]
|academic_advisors = 
|doctoral_students = 
|notable_students  = {{le|维尔纳·哈特曼|Werner Hartmann (physicist)}}
|known_for         = [[肖特基二極體]]<br />[[肖特基效應]]<br />[[肖特基勢壘]]<br />[[歐姆接觸|肖特基接觸]]<br />{{le|肖特基異常|Schottky anomaly}}<br />[[四極管|簾柵極真空管]]<br />[[鋁帶式麥克風]]<br />鋁帶式揚聲器<br />[[场致发射|場發射理論]]<br />[[散粒噪声|散粒雜訊]]
|author_abbrev_bot = 
|author_abbrev_zoo = 
|influences        = 
|influenced        = 
|awards            = [[休斯奖章]]（1936年）<br />{{le|魏納獎|Werner-von-Siemens-Ring}}（1964年）
|religion          = 
|signature         =  <!--(filename only)-->
|footnotes         = 父：[[數學家]] {{le|弗里德里希·赫曼·肖特基|Friedrich Hermann Schottky}}
}}
'''華特·赫尔曼·蕭特基'''（{{lang-de|'''Walter Hermann Schottky'''}}，{{bd|1886年|7月23日|1976年|3月4日}}），德國[[物理學家]]。他在早期的[[電子]]與[[離子]]發射現象的理論發展上扮演着重要角色，於1919年發明[[四極管|簾柵極真空管]]（四極管）<ref>{{Cite journal|last=Guarnieri|first=M.|date=2012|title=The age of vacuum tubes: the conquest of analog communications|journal=IEEE Ind. Electron. M.|volume=6|issue=2|pages=52–54|doi=10.1109/MIE.2012.2193274|ref=harv}}</ref>，後來也在[[半導體元件]]、[[工程物理學]]、科技领域有許多重大貢獻。現今[[蕭特基二極體]]廣泛用於每一台電腦、也在一些高頻領域等有所应用。

==學歷==
1904年由德國柏林的{{link-de|斯坦格利兹文理中学|Steglitz Gymnasium}}畢業。1908年於[[柏林洪堡大學|柏林大學]]獲得物理學士，1912年於柏林大學在[[普朗克]]在[[海因里希·鲁本斯]]指導下獲得物理博士，論文名稱是：''Zur relativtheoretischen Energetik und Dynamik''。

==經歷==
1912-14年間在[[耶拿大學]]作博士後研究，1919-23年間在[[維爾茨堡大學]]講學，1923-27年間擔任[[羅斯托克大學]]理論物理教授。1914-19, 1927-58年間兩度在西門子研究實驗室（Siemens Research laboratories）工作。

== 主要科學成就 ==
回顧起來，蕭特基最重要的科學成就可說是1914年發現的知名古典公式，一個點電荷q，與距離x的金屬平面間的相互作用能，現今寫成 -''q''<sup>2</sup>/16π''ε''<sub>0</sub>''x''
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Possibly, in retrospect, Schottky's most important scientific achievement was to develop (in 1914) the well-known classical formula, now written -''q''<sup>2</sup>/16π''ε''<sub>0</sub>''x'', for the interaction energy between a point [[electric charge|charge]] ''q'' and a ''flat'' [[metal]] surface, when the charge is at a distance ''x'' from the surface. Owing to the method of its derivation, this interaction is called the "image potential energy" (image PE). Schottky based his work on earlier work by [[William Thomson, 1st Baron Kelvin|Lord Kelvin]] relating to the image PE for a sphere. Schottky's image PE has become a standard component in simple models of the barrier to motion, ''M''(''x''),  experienced by an electron on approaching a [[metal]] surface or a [[metal]]-[[semiconductor]] interface from the inside. (This ''M''(''x'') is the quantity that appears when the one-dimensional, one-particle, [[Schrödinger equation]] is written in the form

:<math>\frac{d^2}{dx^2} \Psi(x) = \frac{2m}{\hbar^2} M(x) \Psi(x) .</math>

Here, <math> \hbar </math> is [[Planck's constant]] divided by 2π, and ''m'' is the [[electron mass]].)

The image PE is usually combined with terms relating to an applied [[electric field]] ''F'' and to the height ''h'' (in the absence of any field) of the barrier. This leads to the following expression for the dependence of the barrier energy on distance ''x'', measured from the "electrical surface" of the [[metal]], into the [[vacuum]] or into the [[semiconductor]]:

:<math> M(x) = \; h -eFx - e^2/4 \pi \epsilon_0 \epsilon_r x \;. </math>

Here, ''e'' is the [[elementary charge|elementary positive charge]], ''ε''<sub>0</sub> is the [[electric constant]] and ''ε''<sub>r</sub> is the [[relative permittivity]] of the second medium (=1 for [[vacuum]]).  In the case of a [[metal-semiconductor junction]], this is called a [[Schottky barrier]]; in the case of the metal-vacuum interface, this is sometimes called a [[Field electron emission|Schottky-Nordheim barrier]]. In many contexts, ''h'' has to be taken equal to the local [[work function]] ''φ''.

This [[Field electron emission|Schottky-Nordheim barrier]] (SN barrier) has played in important role in the theories of [[thermionic emission]] and of [[field electron emission]]. Applying the field causes lowering of the barrier, and thus enhances the emission current in [[thermionic emission]]. This is called the "[[Thermionic emission|Schottky effect]]", and the resulting emission regime is called "[[Thermionic emission|Schottky emission]]". 

In 1923 Schottky suggested (incorrectly) that the experimental phenomenon then called autoelectronic emission and now called [[field electron emission]] resulted when the barrier was pulled down to zero. In fact, the effect is due to [[quantum tunnelling|wave-mechanical tunneling]], as shown by Fowler and Nordheim in 1928.  But the [[Field electron emission|SN barrier]] has now become the standard model for the tunneling barrier.

Later, in the context of [[semiconductor devices]], it was suggested that a similar barrier should exist at the junction of a metal and a semiconductor. Such barriers are now widely known as [[Schottky barrier]]s, and considerations apply to the transfer of electrons across them that are analogous to the older considerations of how electrons are emitted from a metal into vacuum. (Basically, several emission regimes exist, for different combinations of field and temperature.  The different regimes are governed by different approximate formulae.)

When the whole behaviour of such interfaces is examined, it is found that they can act (asymmetrically) as a special form of electronic diode, now called a [[Schottky diode]] . In this context, the [[metal-semiconductor junction]] is known as a "[[Schottky contact|Schottky (rectifying) contact']]". 

Schottky's contributions, in surface science/emission electronics and in semiconductor-device theory, now form a significant and pervasive part of the background to these subjects. It could possibly be argued that - perhaps because they are in the area of technical physics - they are not as generally well recognized as they ought to be.
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==獲獎==
因發現熱電子發射的散粒效應（蕭特基稱它是Schrot effect），也就是在高真空放電管中的自發性的電流變化，以及發明簾柵極真空管與接收無線電訊號的超外差方式，於1936年獲得倫敦[[皇家學會]][[休斯奖章]]。

為了表揚他在理解許多物理現象上所做的開創性工作，並促成許多重要的技術應用，例如真空管放大器、半導體等方面的貢獻，於1964年獲得德國技術科學最高榮譽：{{le|魏納獎|Werner-von-Siemens-Ring}}。

==爭論==
*超外差（superheterodyne）的發明一般是歸於[[埃德温·霍华德·阿姆斯特朗]]，然而，蕭特基在{{le|Proc. IRE|Proceedings of the IEEE}}發表過的論文也声称自己發明了相似的東西。
* 1939年：最早的[[PN結]]

==個人生活與家庭==
父親是[[數學家]]{{le|弗里德里希·赫曼·肖特基|Friedrich Hermann Schottky}}（1851–1935）。 妻子是Elizabeth，育有一女兩子。 華特·蕭特基的父親於1882年被聘任為[[蘇黎世大學]]的數學教授，四年後華特出生，1892年又接受[[馬爾堡大學]]聘任而移居德國。

==紀念==
以他的名字來命名紀念的事物有：德國{{link-de|蕭特基學院|Walter Schottky Institute}}、{{link-de|蕭特基獎|Walter-Schottky-Preis}}，以及[[蕭特基能障]]、蕭特基二極體。

==書籍著作==
* ''Thermodynamik'', Julius Springer, Berlin, Germany, 1929.
* ''Physik der Glühelektroden'', Akademische Verlagsgesellschaft, Leipzig, 1928.

== 參見 ==
*[[肖特基缺陷]]
*[[肖特基二極體]]

== 参考资料 ==
{{reflist}}

==外部連結==
* [http://www.tf.uni-kiel.de/matwis/amat/def_en/kap_2/advanced/t2_1_3.html Walter Schottky] {{Wayback|url=http://www.tf.uni-kiel.de/matwis/amat/def_en/kap_2/advanced/t2_1_3.html |date=20190619234406 }}
* [https://web.archive.org/web/20011122102144/http://www.geocities.com/bioelectrochemistry/schottky.htm Biography of Walter H. Schottky]
* [http://www.wsi.tum.de/ Walter Schottky Institut] {{Wayback|url=http://www.wsi.tum.de/ |date=20210417024200 }}
* {{DNB-Portal|118759183}}
* [https://web.archive.org/web/20090120102410/http://gnt-verlag.de/de/?id=88 Reinhard W. Serchinger: Walter Schottky – Atomtheoretiker und Elektrotechniker.] Sein Leben und Werk bis ins Jahr 1941. Diepholz; Stuttgart; Berlin: GNT-Verlag, 2008.
* [http://www.nndb.com/people/438/000172919/ Schottky's nndb profile] {{Wayback|url=http://www.nndb.com/people/438/000172919/ |date=20210226005532 }}
* [http://genealogy.math.ndsu.nodak.edu/id.php?id=55830 Schottky's math genealogy] {{Wayback|url=http://genealogy.math.ndsu.nodak.edu/id.php?id=55830 |date=20200705063111 }}

{{休斯奖章获得者}}
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[[Category:半導體物理學家]]
[[Category:德国电子工程师]]
[[Category:德國物理學家]]
[[Category:柏林洪堡大學校友]]
[[Category:休斯奖章获得者]]